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- Title
Physical origin of gate voltage-dependent drain-source capacitance in short-channel MOSFETs.
- Authors
Seoyoung Hong; Seonghearn Lee
- Abstract
For the first time, it is revealed that the physical origin of the gate-source voltage (Vgs)-dependent drain-source capacitance in short-channel metal-oxide semiconductor field-effect transistors (MOSFETs) comes from the depletion capacitance components between the drain and channel end in the saturation region. On the basis of this origin, it is newly found that the Vgs-dependent channel resistance should be connected in series with the drain-source capacitance to model the high-frequency (HF) response of the intrinsic output capacitance. The accuracy of an improved MOSFET model, including the channel resistance, is validated by observing the excellent agreement with the measured S-parameters in the wide range of Vgs up to 40 GHz.
- Subjects
ELECTRIC potential; CAPACITANCE meters; METAL oxide semiconductor field-effect transistor circuits; SEMICONDUCTORS; HIGH-frequency discharges
- Publication
Electronics Letters (Wiley-Blackwell), 2014, Vol 50, Issue 24, p1879
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2014.2971