Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleHigh Mobility MoS<sub>2</sub> Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.AuthorsWang, Jingli; Yao, Qian; Huang, Chun‐Wei; Zou, Xuming; Liao, Lei; Chen, Shanshan; Fan, Zhiyong; Zhang, Kai; Wu, Wei; Xiao, Xiangheng; Jiang, Changzhong; Wu, Wen‐WeiPublicationAdvanced Materials, 2016, Vol 28, Issue 37, p8302ISSN0935-9648Publication typeArticleDOI10.1002/adma.201602757