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- Title
Crystal growth and equilibrium crystal shapes of silicon in the melt.
- Authors
Yang, Xinbo; Fujiwara, K.; Maeda, K.; Nozawa, J.; Koizumi, H.; Uda, S.
- Abstract
ABSTRACT The crystal growth shape (CGS) and equilibrium crystal shape (ECS) of silicon in Si melt are observed using in situ observation. Fully faceted silicon CGSs, which are dominated by the {111} facets, are observed from the {112} and {110} orientation. Silicon CGS in three-dimensional in Si melt is octahedral in shape, bounded by {111} facets. Silicon ECSs in the melt are obtained by the relaxation from the CGSs and exhibit the {111} facets separated by curved interface. Copyright © 2012 John Wiley & Sons, Ltd.
- Subjects
SILICON research; SILICON testing; SILICON crystallography; MELTING; OCTAHEDRAL molecules
- Publication
Progress in Photovoltaics, 2014, Vol 22, Issue 5, p574
- ISSN
1062-7995
- Publication type
Article
- DOI
10.1002/pip.2290