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- Title
Enhancement of the Raman scattering in grooved silicon structures.
- Authors
Zoteev, A. V.; Golovan', L. A.; Krutkova, E. Yu.; Laktyun'kin, A. V.; Mamichev, D. A.; Kashkarov, P. K.; Timoshenko, V. Yu.; Astrova, E. V.; Perova, T. S.
- Abstract
The Raman effect in grooved silicon structures consisting of an array of cavities (grooves) and silicon layers is studied. It is found that the intensity of the Stokes component increases severalfold when the thickness of the silicon layers (1–2 μm) is close to the excitation wavelength. The results obtained, interpreted as a manifestation of the effects of localization of light, suggest that grooved structures of this kind offer promise as matrices providing for enhanced efficiency of the Raman scattering.
- Subjects
RAMAN effect; LIGHT scattering; SILICON; ELECTRONIC excitation; ELECTRONS
- Publication
Semiconductors, 2007, Vol 41, Issue 8, p970
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782607080209