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- Title
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures.
- Authors
Ivanov, Yu.I.; Agrinskaya, N.V.; Petrov, P.V.; Ustinov, V.M.; Tsyrlin, G.E.
- Abstract
Photoluminescence of GaAs/AlGaAs multiple-quantum-well structures incorporating positively charged beryllium-impurity shallow-level acceptors (the so-calledA(+) centers) was investigated. A novel luminescence line, which originated from radiative recombination of free electrons withA(+) centers, was observed. It was shown that its spectral position is determined uniquely by the binding energy of A(+) centers. It was also ascertained that the binding energy of A(+) centers increases with a decrease in the quantum-well width when the latter is comparable to the radius of A(+) centers.
- Subjects
GALLIUM arsenide semiconductors; PHOTOLUMINESCENCE
- Publication
Semiconductors, 2002, Vol 36, Issue 8, p929
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1500474