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- Title
Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm.
- Authors
Davydov, V. Yu.; Lundin, V. V.; Smirnov, A. N.; Sobolev, N. A.; Usikov, A. S.; Emel’yanov, A. M.; Makoviıchuk, M. I.; Parshin, E. O.
- Abstract
The influence of rapid-anneal conditions and subsequent coimplantation of oxygen ions on the photoluminescence of erbium ions implanted with an energy of 1 MeV and dose of 5 × 10[sup 14] cm[sup -2] in MOCVD-grown GaN films is investigated. The erbium photoluminescence intensity at a wavelength ∼1.54 µm increases as the fixed-time (15 s) anneal temperature is raised from 700 °C to 1300 °C. The erbium photoluminescence intensity can be increased by the coimplantation of oxygen ions at anneal temperatures in the indicated range below 900 °C. The transformation of the crystal structure of the samples as a result of erbium-ion implantation and subsequent anneals is investigated by Raman spectroscopy.
- Subjects
ION implantation; GALLIUM nitride; THIN films
- Publication
Semiconductors, 1999, Vol 33, Issue 1, p1
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1187636