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- Title
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon.
- Authors
Parkhomenko, H. P.; Solovan, M. N.; Maryanchuk, P. D.
- Abstract
Silicon nanowires are formed on n-Si substrates by chemical etching. p-NiO/n-Si heterostructures are fabricated by reactive magnetron sputtering. The energy diagram of anisotype p-NiO/n-Si heterostructures is constructed according to the Anderson model. The current-voltage and capacitance-voltage characteristics are measured and analyzed. The main current-transport mechanisms through the p-NiO/n-Si heterojunction under forward and reverse biases are established.
- Subjects
NICKEL oxide; HETEROSTRUCTURES; ELECTRIC properties; SILICON nanowires; MAGNETRON sputtering
- Publication
Semiconductors, 2018, Vol 52, Issue 7, p859
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618070163