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- Title
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.
- Authors
Maleev, N.; Belyakov, V.; Vasil'ev, A.; Bobrov, M.; Blokhin, S.; Kulagina, M.; Kuzmenkov, A.; Nevedomskii, V.; Guseva, Yu.; Maleev, S.; Ladenkov, I.; Fefelova, E.; Fefelov, A.; Ustinov, V.
- Abstract
The molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors is studied and optimized. The choice of the substrate-holder temperature, growth rate and III/V ratio in the synthesis of individual heterostructure regions, the thickness of AlAs inserts and barrier-layer quality are critical parameters to achieve the optimal characteristics of heterobarrier varactors. The proposed triple-barrier structures of heterobarrier varactors with thin InGaAs strained layers immediately adjacent to an InAlAs/AlAs/InAlAs heterobarrier, mismatched with respect to the InP lattice constant at an AlAs insert thickness of 2.5 nm, provides a leakage current density at the level of the best values for heterobarrier varactor structures with 12 barriers and an insert thickness of 3 nm.
- Subjects
GALLIUM arsenide transistors; MATHEMATICAL optimization; TRANSISTORS; LATTICE constants; LATTICE dynamics
- Publication
Semiconductors, 2017, Vol 51, Issue 11, p1431
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782617110185