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- Title
Low-temperature fabrication of conductive SiC ceramics using SiO<sub>2</sub>-coated SiC nanopowder with Sc<sub>2</sub>O<sub>3</sub> additive by spark plasma sintering.
- Authors
Li, Huaxin; Yang, Fuquan; Luo, Ziqiang; Wei, Lianfeng; Wang, Yafeng; Zheng, Yong; Shen, Weijian; Lu, Chuanyang; Li, Yafei; He, Yanming; Yang, Jianguo
- Abstract
To reduce the sintering temperature of liquid-phase sintered conductive SiC ceramics, the SiC nanopowder with Sc2O3 additives was intentionally oxidized by heat treatment in air to enhance the SiO2 content coated on SiC surfaces moderately. Taking advantage of the lower eutectic temperature (1660 °C) between SiO2 and Sc2O3, conductive SiC ceramics were successfully sintered at 1700 °C. The effects of sintering temperature (1700–1900 °C), holding time (1–10 min), and additive content (1–7 wt.%) on microstructural, mechanical, and electrical properties were systematically investigated. The phase composition of as-received SiC ceramics contained Sc–Si–O–C–N and doped β-SiC, without apparent phase transformation of β-SiC to α-SiC. The Vickers hardness, elastic modulus, and fracture toughness of SiC ceramics varied within the ranges of 18.08–22.29 GPa, 269.12–391.16 GPa, and 4.09–7.86 MPa m1/2, respectively. The electrical resistivity of conductive SiC ceramics obtained under different process conditions varied in a small range (1–10 Ω cm). Meanwhile, the low-temperature sintering, phase formation, and evolution mechanisms of electrical properties were discussed in detail.
- Subjects
HEAT treatment; VICKERS hardness; FRACTURE toughness; ELASTIC modulus; ELECTRICAL resistivity
- Publication
Journal of Materials Science, 2024, Vol 59, Issue 32, p15149
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-024-10086-9