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- Title
Field effects in electron-irradiated GaP LEDs.
- Authors
Vernydub, R. M.; Kyrylenko, O. I.; Konoreva, O. V.; Olikh, Ya. M.; Radkevych, O. I.; Stratilat, D. P.; Tartachnyk, V. P.
- Abstract
The paper presents the results of the study of field effects in non-irradiated and irradiated by electrons (E = 2 MeV, F = 8.2⋅1016 cm-2) gallium phosphide (GaP) light emitting diodes (LEDs) under reverse bias. The avalanche multiplication of charge carriers and tunneling breakdown in the space charge region has been considered. An increase of breakdown voltage after electron irradiation has been revealed. The effects of the annealing of non-irradiated and irradiated diodes in the temperature range of 20 to 500 °C have been analyzed.
- Subjects
INDUCTIVE effect; SPACE charge; LIGHT emitting diodes; BREAKDOWN voltage; CHARGE carriers; GALLIUM phosphide
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, Vol 25, Issue 2, p179
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo25.02.179