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- Title
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions.
- Authors
Tetyorkin, V. V.; Sukach, A. V.; Tkachuk, A. I.; Movchan, S. P.
- Abstract
Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage measurements. At 77 K the dominant conduction mechanism was found to be the space-charge-limited current. The photovoltaic response in the long-wave infrared region with the half-peak cut-off wavelength ranged from 8.0 to 9.0 μm was observed in these heterojunctions for the first time. The possible mechanism of the photoresponse is the internal photoemission of holes from p-PbTe across the heterojunction barrier.
- Subjects
PHOTOSENSITIVITY; LEAD telluride crystals; CADMIUM telluride; HETEROJUNCTIONS; SUBSTRATES (Materials science); EPITAXY
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, Vol 16, Issue 1, p59
- ISSN
1560-8034
- Publication type
Article