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- Title
Novel red phosphors GdGaTaO:Eu,Bi for white LED applications.
- Authors
Francis, Linda; Rao, P.; Mahesh, S.; Sreena, T.; Babu, Parvathi
- Abstract
Novel red phosphor materials GdGaTaO: xEu, yBi were prepared using a high temperature solid state reaction route. Crystalline structure, morphology, absorbance and photoluminescence properties were studied using powder X-ray diffractometer, scanning electron microscope, UV-Vis absorption spectrophotometer and fluorescence spectrophotometer respectively. Red shift in the charge transfer band coupled with an increased emission intensity in the red region ~612 nm was observed with Bi codoping. Energy transfer from Bi to Eu was found to be the major mechanism towards the enhancement of the emission intensity. Optimal doping level of Eu and Bi in GdGaTaO host was determined from the photoluminescence studies. The prepared samples exhibited higher emission intensities than the standard YO:Eu red phosphors.
- Subjects
PHOSPHOR manufacturing; OPTICAL materials; X-ray diffractometers; SEMICONDUCTOR doping; CRYSTAL structure; MORPHOLOGY
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 8, p5743
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3131-z