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- Title
Temperature dependence of ZnO thin films grown on Si substrate.
- Authors
Kim, Y. Y.; Ahn, C. H.; Kang, S. W.; Kong, B. H.; Mohanta, S. K.; Cho, H. K.; Lee, J. Y.; Kim, H. S.
- Abstract
The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520–720 °C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.
- Subjects
SOLID state electronics; DIAMOND thin films; THIN films in electrical insulation; FILM resistors; FERROELECTRIC thin films; THIN films; ZINC oxide; X-rays; SOLID state physics
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 8/9, p749
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9402-6