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- Title
Near-field scanning optical microscopy of quantum dot broad area laser diodes.
- Authors
Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I.
- Abstract
Near-field scanning optical microscopy (NSOM) studies of self-assembled InAs quantum dot broad area laser diodes (QD-BALDs) with different active layer were performed. The high resolution (<100 nm) of NSOM provides a detailed mapping of the laser output from the active region. Representative near-field electroluminescence (EL) spectra taken the cross section of the QD-BALD structures below and above the lasing threshold are plotted. Moreover, spatially resolved near-field scanning images of the waveguide are obtained by collecting the EL as the tip is scanned across the surface. Such near-field measurements show a relationship between laser emission and different active layer structure.
- Subjects
NEAR-field microscopy; QUANTUM dots; LASERS; ELECTROLUMINESCENCE; MICROSCOPY; LAYER structure (Solids)
- Publication
Journal of Materials Science: Materials in Electronics, 2007, Vol 18, p195
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9202-z