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- Title
Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma.
- Authors
Kim, H. W.; Hwang, W. S.; Lee, C.; Reif, R.
- Abstract
Examines the low temperature growth of homoepitaxial layer on silicon substrate. Use of low temperature in-situ cleaning to reduce the interfacial contaminants; Oxygen concentration at the interface; Measurement of the thickness of the silicon epitaxial layers.
- Subjects
THIN films; SILICON; EPITAXY; INTERFACES (Physical sciences); OXYGEN; THICKNESS measurement
- Publication
Journal of Materials Science Letters, 2003, Vol 22, Issue 13, p939
- ISSN
0261-8028
- Publication type
Article
- DOI
10.1023/A:1024623804920