We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
High-efficiency Doherty power amplifier with wide OPBO range for base station systems.
- Authors
Zhiqun Cheng; Guoping Xiong; Yan Liu; Ting Zhang; Jianting Tian; Guo, Y. Jay
- Abstract
A high-efficiency, S-band Doherty power amplifier (DPA) with wide output power back-off (OPBO) range is presented. A novel parasitic capacitance compensation approach is applied at the output of Cree's GaN high-electron-mobility transistor to achieve high saturation efficiency in a wide OPBO range. Specifically, a parallel shorting microstrip line between the transistor output and its match network is adopted to realise parasitic capacitance compensation. The measurement results indicate good Doherty behaviour with 10 dB back-off efficiency of 40.6–44.2% and saturation efficiency of 70.2–73.3% over 2.9–3.3 GHz. When stimulated by a 20-MHz LTE signal with 7.5 dB PAPR, the proposed Doherty amplifier power, combined with digital pre-distortion, achieved adjacent channel leakage ratios below −47.2 dBc. The DPA demonstrate superior performance in OPBO range and efficiency, which makes it an ideal component for base station communication systems.
- Subjects
MODULATION-doped field-effect transistors; MICROSTRIP transmission lines; TELECOMMUNICATION systems; POWER amplifiers; ELECTRIC capacity; TRANSISTORS
- Publication
IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2019, Vol 13, Issue 7, p926
- ISSN
1751-8725
- Publication type
Article
- DOI
10.1049/iet-map.2018.5617