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Correlation between the Hall Resistance and Magnetoresistance in the Mixed State of an Nd<sub>2 − x</sub>Ce<sub> x </sub>CuO<sub>4 + δ</sub> Electronic Superconductor.
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- Physics of Metals & Metallography, 2017, v. 118, n. 12, p. 1184, doi. 10.1134/S0031918X17120031
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- Article
Magnetoresistance and hall effect in electron-doped superconductor NdCeCuO with different degrees of nonstoichiometric disorder: A two-band model.
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- Physics of Metals & Metallography, 2014, v. 115, n. 5, p. 446, doi. 10.1134/S0031918X14050032
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Anisotropy of transport properties of layered superconductors Nd<sub>2− x </sub>Ce<sub> x </sub>CuO<sub>4 + δ</sub> and Ca<sub>2 − x </sub>Sr<sub> x </sub>RuO<sub>4</sub>.
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- Physics of Metals & Metallography, 2007, v. 104, n. 1, p. 67, doi. 10.1134/S0031918X07070095
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Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures.
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- Journal of Experimental & Theoretical Physics, 2013, v. 117, n. 1, p. 144, doi. 10.1134/S1063776113080116
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- Article
Pairing type change upon an increase in the cerium doping level in the NdCeCuO electronic superconductor.
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- Journal of Experimental & Theoretical Physics, 2012, v. 114, n. 3, p. 496, doi. 10.1134/S1063776112020173
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- Article
Quasi-two-dimensional transport properties of the layered superconductor Nd<sub>2</sub>− xCe<sub> x </sub>CuO<sub>4+δ</sub>.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 3, p. 626, doi. 10.1134/S1063776107090208
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- Article
Effect of Disorder on the Transport Properties of the High-T[sub c] Superconductor Nd[sub 2 – ][sub x ]Ce[sub x][sub ]CuO[sub 4 + δ].
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- Journal of Experimental & Theoretical Physics, 2001, v. 92, n. 6, p. 1084, doi. 10.1134/1.1385650
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- Article
Effect of the nonstoichiometric disorder on the temperature dependence of the upper critical field in Nd<sub>2− x</sub>Ce<sub> x</sub>CuO<sub>4+δ</sub> electron superconductors.
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- JETP Letters, 2008, v. 88, n. 2, p. 123, doi. 10.1134/S0021364008140117
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- Article
Spin Effects in Magnetoresistance Induced in an n-In<sub>x</sub>Ga<sub>1 – x</sub>As/GaAs Double Quantum Well by a Parallel Magnetic Field.
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- Semiconductors, 2005, v. 39, n. 1, p. 107, doi. 10.1134/1.1852657
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- Article
Evaluation of Mobility Gaps and Density of Localized Hole States in p-Ge/Ge[sub 1 – ][sub x]Si[sub x] Heterostructures in the Quantum Hall Effect Mode.
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- Semiconductors, 2002, v. 36, n. 5, p. 519, doi. 10.1134/1.1478542
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The quantum Hall effect in a wide p-Ge1_xSix/Ge/p-Ge1_xSix potential well
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- Semiconductors, 1998, v. 32, n. 6, p. 749, doi. 10.1134/1.1187458
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Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge[sub 1-x]Si[sub x] heterostructures.
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- Semiconductors, 1997, v. 31, n. 3, p. 222, doi. 10.1134/1.1187116
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Shubnikov–de Haas oscillations in HgSe<Fe> and HgSe<Co> under hydrostatic pressure.
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- Semiconductors, 1997, v. 31, n. 3, p. 261
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Longitudinal Magnetoresistance and Hall Effect of Cd<sub>x</sub>Hg<sub>1−x</sub> Te in Strong Magnetic Fields.
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- Physica Status Solidi (B), 1974, v. 64, n. 2, p. 717, doi. 10.1002/pssb.2220640236
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- Article