We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Electric field modification of magnetism in Au/La<sub>2/3</sub>Ba<sub>1/3</sub>MnO<sub>3</sub>/Pt device.
- Authors
Xiong, Y. Q.; Zhou, W. P.; Li, Q.; Cao, Q. Q.; Tang, T.; Wang, D. H.; Du, Y. W.
- Abstract
The La2/3Ba1/3MnO3 film is deposited in a CMOS-compatible Pt/Ti/SiO2/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La2/3Ba1/3MnO3/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn3+-O2−-Mn4+- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La2/3Ba1/3MnO3/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.
- Subjects
ELECTRIC fields; THIN films analysis; SUBSTRATES (Materials science); MAGNETOELECTRIC effect; MAGNETIZATION; ELECTRIC resistance
- Publication
Scientific Reports, 2015, p12766
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep12766