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- Title
A direct method to extract RF MOSFET model parameters using common source-gate and source-drain configurations.
- Authors
Seonghearn Lee
- Abstract
A direct extraction method is newly developed to determine RF MOSFET model parameters using two-port parameter equation derived from two zero-bias equivalent circuits under common source-gate and source-drain configurations. This method is much simpler and more accurate than conventional ones using common source-bulk configuration, because parasitic resistances are directly extracted from low-frequency data without a complicated linear regression of high-frequency data and capacitances are directly determined without any inappropriate assumptions. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 915–917, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23231
- Subjects
METAL oxide semiconductor field-effect transistors; EQUATIONS; ELECTRIC circuits; REGRESSION analysis; MICROWAVES
- Publication
Microwave & Optical Technology Letters, 2008, Vol 50, Issue 4, p915
- ISSN
0895-2477
- Publication type
Article
- DOI
10.1002/mop.23231