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- Title
Effect of holmium doping on structural, electrical and piezoelectric properties of lead-free (Ba,Ca)(Ti,Sn)O<sub>3</sub> ceramics.
- Authors
Chitra; Laishram, Radhapiyari; Vashishtha, Aditi; Singh, Mukesh Kumar; Chandra, Kamal Kant; Singh, K. Chandramani
- Abstract
Lead-free (Ba0.91Ca0.09Sn0.07Ti0.93)O3 (BCST) ceramics, doped with holmium (Ho) in the range 0-1.0 mol%, were synthesized using conventional solid-state sintering method. XRD analyses of these ceramic samples confirm single phase pure perovskite structure. Evidence of Ho3+ substituting Ba2+ via electronic charge compensation exists in the range 0-0.4 mol%, while ionic charge compensation mechanism dominates beyond 0.4 mol%. Crystallite size and lattice strain undergo systematic change, while the room temperature dielectric constant (εrt) decreases with increasing Ho content. The Curie temperature Tc and maximum dielectric constant (εm) at Tc remain almost unchanged. Remnant polarization (Pr), electromechanical coupling constant (kp) and piezoelectric charge coefficient (d33) exhibit increasing trend with increasing Ho content and reach their maximum values of 8.2 µC/cm2, 25% and 220 pC/N respectively at 1.0 mol% of Ho content. The study reveals that doping of BCST system with appropriate quantity of Ho can improve its ferroelectric and piezoelectric properties.
- Subjects
HOLMIUM; DOPING agents (Chemistry); LASER photochemistry; SEMICONDUCTOR doping; PIEZOELECTRIC materials; CERAMIC materials; PEROVSKITE
- Publication
Journal of Materials Science: Materials in Electronics, 2019, Vol 30, Issue 4, p3965
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-00682-w