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- Title
Study of MoN gate impact on GaN high electron mobility transistor.
- Authors
Zhang, Lixing; Lv, BeiBei; Ding, Xu; Yu, Faxin; Mo, Jiongjiong
- Abstract
In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions. The Schottky gate is studied through forward and reverse characteristics with different processed MoN, which is compared with the standard Ni gate. Similar DC and radio frequency (RF) performances are obtained with MoN and Ni gate, while MoN demonstrated higher reliability than Ni gate through RF aging test.
- Subjects
MODULATION-doped field-effect transistors; GALLIUM nitride; MOLYBDENUM nitrides; HIGH temperature electronics; RADIO frequency
- Publication
Electronics Letters (Wiley-Blackwell), 2024, Vol 60, Issue 10, p1
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/ell2.13236