We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Growth, Characterization, and Properties of Carbon Nitride with and without Silicon Addition.
- Authors
Chen, L. C.; Wu, C. T.; Wu, J.-J.; Chen, K. H.
- Abstract
Carbon nitride and silicon carbon nitride have been grown by microwave plasma chemical vapor deposition, electron-cyclotron-resonance plasma chemical vapor deposition, magnetron sputtering and ion beam sputtering. Depending on the specific process details, a wide range of microstructure and morphologies has been demonstrated. Effects of Si addition to CN network on the structure of the deposited materials were studied. While Si involvement in CVD process was crucial for crystal growth, excessive Si incorporation led to formation of amorphous phase in PVD process. Various optical constants including the band gap and refractive index of the SiCN phases are also reported.
- Subjects
NITRIDES; SILICON nitride
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2000, Vol 14, Issue 2/3, p333
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979200000340