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- Title
Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer.
- Authors
Rienzi, Vincent; Smith, Jordan; Lim, Norleakvisoth; Chang, Hsun-Ming; Chan, Philip; Wong, Matthew S.; Gordon, Michael J.; DenBaars, Steven P.; Nakamura, Shuji
- Abstract
A III-nitride red LED with an active region temperature of 835 °C on a Si substrate utilizing a strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm at 1 A/cm2 to 636 nm at 150 A/cm2. The on-wafer external quantum efficiency was 0.021% at 7 A/cm2 with an emission wavelength of 655 nm. The LED grown on a Si substrate exhibited a 116 nm redshift when compared to a co-loaded LED grown on sapphire. This is attributed to the difference in strain state for the III-nitride layers grown on Si compared to sapphire, allowing for more indium to be incorporated in the LED grown on Si. This suggests efficient III-nitride red LEDs and µLEDs on Si with a SRT can be realized with further material, device structure, and processing optimizations.
- Subjects
INDIUM gallium nitride; QUANTUM efficiency; PROCESS optimization; INDIUM; LIGHT emitting diodes
- Publication
Crystals (2073-4352), 2022, Vol 12, Issue 8, p1144
- ISSN
2073-4352
- Publication type
Article
- DOI
10.3390/cryst12081144