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- Title
Enhanced Water‐Splitting Application Using GaN/AlGaN Heterojunctions.
- Authors
Xi, Xin; Chen, Zhizhong; Zhao, Lixia; Chen, Yiyong; Nie, Jingxin; Deng, Chuhan; Pan, Zuojian; Zhang, Haodong; Kang, Xiangning
- Abstract
Herein, a research is conducted on a AlGaN/GaN photoanode by depositing AlGaN with different thicknesses on the GaN epitaxial layer. The result shows that GaN with a thin AlGaN coating has significant enhancement on water‐splitting performance. The photocurrent of GaN photoanode with 5 nm AlGaN layer can be enhanced by a factor of 1.8, compared with planar GaN. The high performance of the AlGaN/GaN heterojunction photoanode is mainly attributed to the high electron–hole density generated at the interface between GaN and AlGaN layers and the quantum tunneling transport of photogenerated carriers. The high concentration of carriers can not only enhance the mobility of carriers but also increase the electron–hole pairs for the water oxidation reaction. The quantum tunneling effect can facilitate the carriers through the high‐energy barrier of AlGaN for photolysis reaction with electrolyte. Herein, a promising method for the application of GaN in efficient water splitting is provided.
- Subjects
QUANTUM tunneling; GALLIUM nitride; PHOTOELECTROCHEMICAL cells; PHOTOELECTROCHEMISTRY; GALLIUM nitride films; CHARGE carrier mobility; CARRIER density; EPITAXIAL layers
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2022, Vol 219, Issue 19, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.202200234