We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates.
- Authors
Kajikawa, Yasutomo; Nishigaichi, Makoto; Inoue, Masahiro; Kayano, Mitsunori
- Abstract
The growth of GaSb on Ge (111) vicinal substrates is performed by molecular beam epitaxy with Bi irradiation previous to and during the growth. The effects of the Bi irradiation on the surface morphology and on the crystallinity are investigated using atomic force microscopy and X‐ray diffraction, respectively. It is shown that Bi works as a surfactant, which suppresses the generation of rotational twins in the GaSb layer.
- Subjects
ATOMIC force microscopy; IRRADIATION; X-ray microscopy; SURFACE morphology; MOLECULAR beam epitaxy; X-ray diffraction
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2020, Vol 217, Issue 3, pN.PAG
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201900425