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Sequentially PVD‐Grown Indium and Gallium Selenides Under Compositional and Layer Thickness Variation: Preparation, Structural and Optical Characterization.
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- Advanced Materials Interfaces, 2024, v. 11, n. 15, p. 1, doi. 10.1002/admi.202301086
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- Article
Optical nonlinearities in GaSe and InSe crystals upon laser excitation.
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- Optics & Spectroscopy, 2014, v. 116, n. 4, p. 595, doi. 10.1134/S0030400X1404016X
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- Article
Features of the Growth of Thread-Like xInSe(1 - x)In<sub>2</sub>O<sub>3</sub> Crystals of Two-Layer PbSe and In Films.
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- Glass Physics & Chemistry, 2018, v. 44, n. 4, p. 333, doi. 10.1134/S1087659618040168
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- Article
Study of anharmonicity in pure and doped InSe by Raman scattering.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 30, p. N.PAG, doi. 10.1142/S021797921850340X
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- Article
硒化铟材料的发展及其光电器件应用.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 9/10, p. 1703
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- Article
The Cluster [Re<sub>6</sub>Se<sub>8</sub>I<sub>6</sub>]<sup>3-</sup> Induces Low Hemolysis of Human Erythrocytes in Vitro: Protective Effect of Albumin.
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- International Journal of Molecular Sciences, 2015, v. 16, n. 1, p. 1728, doi. 10.3390/ijms16011728
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- Article
Special Features of the Optical Absorption and Photoconductivity of Indium Monoselenide Upon Laser Excitation.
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- Russian Physics Journal, 2018, v. 60, n. 10, p. 1680, doi. 10.1007/s11182-018-1268-y
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- Article
Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00450-3
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- Article
Reconfigurable InSe Electronics with van der Waals Integration.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101176
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- Article
High‐Performance Phototransistors by Alumina Encapsulation of a 2D Semiconductor with Self‐Aligned Contacts.
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- Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202100954
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- Article
Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100999
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- Article
Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> Wrapped‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Field‐Effect Transistors for Dynamic Threshold Voltage Control.
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- Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100306
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- Article
High-performance polarization-sensitive photodetectors on two-dimensional β-InSe.
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- National Science Review, 2022, v. 9, n. 5, p. 1, doi. 10.1093/nsr/nwab098
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- Article
Impedance anisotropy and quantum photocapacity of bio/inorganic clathrates InSe〈histidine〉 and gase〈histidine〉.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 362, doi. 10.15407/spqeo18.03.362
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- Article
Photoelectric properties of In<sub>2</sub>O<sub>3</sub>-InSe heterostructure with nanostructured oxide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 3, p. 214
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- Article
Parameters of the energy spectrum for holes in CuInSe<sub>2</sub>.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 302
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- Article
Structure and electrical properties of In<sub>2</sub>Se<sub>3</sub><Mn> layered crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 3, p. 290
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- Article
Negative Capacitance Effect in Ag/α-In<sub>2</sub>Se<sub>3</sub>/CdS/CdSe/C Dual Band Stop Filters.
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- Journal of Electronic Materials, 2019, v. 48, n. 1, p. 244, doi. 10.1007/s11664-018-6700-0
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- Article
Effects of Substrate Temperature on Structural and Optical Properties of Spray-Pyrolyzed Cu(GaIn)Se Thin Films on Polyimide Plastic Substrate.
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- Journal of Electronic Materials, 2017, v. 46, n. 12, p. 6745, doi. 10.1007/s11664-017-5746-8
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- Article
Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped InPbSe Polycrystalline.
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- Journal of Electronic Materials, 2017, v. 46, n. 5, p. 3131, doi. 10.1007/s11664-016-5218-6
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- Article
Spectral Dynamics of the n-InSe/ p-BN Heterojunction.
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- Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2686, doi. 10.1007/s11664-015-3738-0
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- Article
Study of Optical and Electrical Properties of InS:Sn Films Deposited by Spray Pyrolysis.
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- Journal of Electronic Materials, 2015, v. 44, n. 7, p. 2536, doi. 10.1007/s11664-015-3806-5
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- Article
Extrinsic Photoelectric Effects in Holmium- and Erbium-Doped n-InSe Crystals under Combined Excitation.
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- Inorganic Materials, 2022, v. 58, n. 7, p. 696, doi. 10.1134/S0020168522070019
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- Article
Role of layer thickness and field-effect mobility on photoresponsivity of indium selenide (InSe)-based phototransistors.
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- Oxford Open Materials Science, 2021, v. 1, n. 1, p. 1, doi. 10.1093/oxfmat/itab010
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- Article
Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals.
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- Technical Physics, 2014, v. 59, n. 3, p. 407, doi. 10.1134/S1063784214030141
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- Article
Sensitive elements of pressure transducers made of layered intercalated InSe, GaSe, and Bi<sub>2</sub>Te<sub>3</sub> crystals.
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- Technical Physics, 2013, v. 58, n. 12, p. 1840, doi. 10.1134/S106378421312013X
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- Article
Van der Waals surface of InSe as a nanorelief standard in metrology of nano-objects.
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- Technical Physics, 2012, v. 57, n. 8, p. 1152, doi. 10.1134/S1063784212080087
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- Article
The study of flexible emission and photoconductivity in 2D layered InSe toward an applicable 1000-nm light emitter and absorber.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 3, p. 1, doi. 10.1007/s00339-017-0843-3
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- Article
Optical and electrical properties of InMnSe thin films.
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- Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 1, p. 349, doi. 10.1007/s00339-015-9194-0
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- Article
Controlled crystallization of β-InS in 65GeS⋅25InS⋅10CsCl chalcohalide glass.
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- Applied Physics A: Materials Science & Processing, 2013, v. 112, n. 4, p. 939, doi. 10.1007/s00339-012-7452-y
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- Article
Photoinduced Contact Evolution and Junction Rearrangement in Two-Dimensional van der Waals Heterostructure.
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- Advanced Functional Materials, 2023, v. 33, n. 48, p. 1, doi. 10.1002/adfm.202306668
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- Article
Flexible Photodetectors Based on All‐Solution‐Processed Cu Electrodes and InSe Nanoflakes with High Stabilities.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202108261
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- Article
Molecular Doping of 2D Indium Selenide for Ultrahigh Performance and Low‐Power Consumption Broadband Photodetectors.
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- Advanced Functional Materials, 2021, v. 31, n. 30, p. 1, doi. 10.1002/adfm.202103353
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- Article
Enhanced Electrocatalytic Activity in GaSe and InSe Nanosheets: The Role of Surface Oxides.
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- Advanced Functional Materials, 2020, v. 30, n. 43, p. 1, doi. 10.1002/adfm.202005466
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- Article
New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties.
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- Advanced Functional Materials, 2020, v. 30, n. 31, p. 1, doi. 10.1002/adfm.202001920
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- Article
Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors.
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- Advanced Functional Materials, 2020, v. 30, n. 13, p. 1, doi. 10.1002/adfm.201908427
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- Article
Realization of Quantum Hall Effect in Chemically Synthesized InSe.
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- Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201904032
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- Article
Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures.
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- Advanced Functional Materials, 2019, v. 29, n. 3, p. N.PAG, doi. 10.1002/adfm.201805491
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- Article
Electrical and Photoresponse Properties of NiFe<sub>2</sub>O<sub>4</sub>/InSe Heterojunction.
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- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 4, p. 1, doi. 10.21272/jnep.16(4).04028
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- Article
InSe Crystals Obtained by Stoichiometric Fusion for Optoelectronic Device Application.
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 5, p. 05037-1, doi. 10.21272/jnep.13(5).05037
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- Article
Deposition and Characterization of Indium Selenide Thin Films for Opto-electronic Devices.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 2, p. 1, doi. 10.21272/jnep.12(2).02010
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- Article
The Study of Electrical Properties of Cobalt Intercalated InSe.
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- Journal of Nano- & Electronic Physics, 2014, v. 6, n. 4, p. 04038-1
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- Article
Topography and Atomic Structure Investigations Of (100) Cleavage Surface of In<sub>4</sub>Se<sub>3</sub> Layered Crystals.
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- Journal of Nano- & Electronic Physics, 2014, v. 6, n. 2, p. 02029-1
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- Article
Layered Indium Selenide under High Pressure: A Review.
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- Crystals (2073-4352), 2018, v. 8, n. 5, p. 206, doi. 10.3390/cryst8050206
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- Article
Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide.
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- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-11920-4
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- Article
Enhancement of the Thermoelectric Performance of Polycrystalline In<sub>4</sub>Se<sub>2.5</sub> by Copper Intercalation and Bromine Substitution.
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- Advanced Energy Materials, 2014, v. 4, n. 2, p. n/a, doi. 10.1002/aenm.201300599
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- Article
INDIUM SELENIDE THIN FILMS BY LASER IRRADIATION OF In/Se LA YERED STRUCTURE.
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- Surface Review & Letters, 2013, v. 20, n. 6, p. 1350058-1, doi. 10.1142/S0218625X13500583
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- Article
Piezoelectric and optoelectronic properties of α-In<sub>2</sub>Se<sub>3</sub> single-crystal nanobelts synthesized by a direct selenization of In<sub>2</sub>O<sub>3</sub>.
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- Journal of Materials Science, 2022, v. 57, n. 8, p. 5072, doi. 10.1007/s10853-022-06949-8
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- Article
Van der waals BP/InSe heterojunction for tunneling field-effect transistors.
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- Journal of Materials Science, 2021, v. 56, n. 14, p. 8563, doi. 10.1007/s10853-021-05784-7
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- Article
Magnetism induced by 3d transition metal atom doping in InSe monolayer.
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- Journal of Materials Science, 2018, v. 53, n. 5, p. 3500, doi. 10.1007/s10853-017-1749-3
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- Article