We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.
- Authors
Prucnal, S.; Rebohle, L.; Nazarov, A. N.; Osiyuk, I. N.; Tjagulskii, I. P.; Skorupa, W.
- Abstract
Charge trapping and quenching of electroluminescence (EL) in SiO2 layers implanted by Ge and rare earth (RE) ions during hot electron injection were investigated. In case of the SiO2:Ge layer the EL quenching is caused by the transformation of the luminescent defects ( $\equiv$ Ge–Si $\equiv$ or $\equiv$ Ge–Ge $\equiv$ ) to optically inactive centers during hot electron excitation, whereas the EL from rare earth centers is quenched due to the electron trapping by RE-centers or their surroundings, but not due to their optical deactivation. Therefore, the flash lamp post-injection annealing releasing trapped electrons reactivates RE centers and increases the operating time of metal–oxide–silicon light emitting devices (MOSLEDs).
- Subjects
ELECTROLUMINESCENCE; RARE earth metals; GERMANIUM; SILICON oxide; ANNEALING of crystals; OPTICS
- Publication
Applied Physics B: Lasers & Optics, 2008, Vol 91, Issue 1, p123
- ISSN
0946-2171
- Publication type
Article
- DOI
10.1007/s00340-008-2948-z