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- Title
Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films.
- Authors
Mittmann, Terence; Szyjka, Thomas; Alex, Hsain; Istrate, Marian Cosmin; Lomenzo, Patrick D.; Baumgarten, Lutz; Müller, Martina; Jones, Jacob L.; Pintilie, Lucian; Mikolajick, Thomas; Schroeder, Uwe
- Abstract
Thin film metal–ferroelectric–metal capacitors with an equal mixture of hafnium oxide and zirconium oxide as the ferroelectric material are fabricated using iridium oxide as the electrode material. The influence of the oxygen concentration in the electrodes during crystallization anneal on the ferroelectric properties is characterized by electrical, chemical, and structural methods. Forming gas, O2, and N2 annealing atmospheres significantly change the ferroelectric performance. The use of oxygen‐deficient electrodes improves the stabilization of the ferroelectric orthorhombic phase and reduces the wake‐up effect. It is found that oxygen‐rich electrodes supply oxygen during anneal and reduce the amount of oxygen vacancies, but the nonferroelectric monoclinic phase is stabilized with a negative impact on the ferroelectric properties.
- Subjects
FERROELECTRIC thin films; OXIDE electrodes; IRIDIUM oxide; THIN films; ZIRCONIUM oxide; OXYGEN electrodes; BARIUM titanate
- Publication
Physica Status Solidi - Rapid Research Letters, 2021, Vol 15, Issue 5, p1
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.202100012