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- Title
High-performance In-Zn-O thin-film transistors with a soluble processed ZrO<sub>2</sub> gate insulator.
- Authors
Son, Byeong‐Geun; Je, So Yeon; Kim, Hyo Jin; Lee, Chul‐Kyu; Lee, Chang‐Kyu; Hwang, Ah Young; Won, Ju Yeon; Song, Ji Hun; Choi, Rino; Jeong, Jae Kyeong
- Abstract
Spin-coated zirconium oxide films were used as a gate dielectric for low-voltage, high performance indium zinc oxide (IZO) thin-film transistors (TFTs). The ZrO2 films annealed at 400 °C showed a low gate leakage current density of 2 × 10-8 A/cm2 at an electric field of 2 MV/cm. This was attributed to the low impurity content and high crystalline quality. Therefore, the IZO TFTs with a soluble ZrO2 gate insulator exhibited a high field effect mobility of 23.4 cm2/V s, excellent subthreshold gate swing of 70 mV/decade and a reasonable Ion/off ratio of ∼106. These TFTs operated at low voltages (∼3.0 V) and showed high drain current drive capability, enabling oxide TFTs with a soluble processed high- k dielectric for use in backplane electronics for low-power mobile display applications. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects
ZIRCONIUM oxide; DIELECTRICS; THIN film transistors; ELECTRIC fields; ELECTRONICS; CRYSTALLINE electric field
- Publication
Physica Status Solidi - Rapid Research Letters, 2013, Vol 7, Issue 7, p485
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201307128