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- Title
Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency.
- Authors
Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia‐Wei; Payne, Adam; Chang, Elizabeth Lori; Upadhyaya, Ajay; Rohatgi, Ajeet
- Abstract
This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714 mV and saturation current density J0b′ of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.
- Subjects
SILICON solar cells; PASSIVATION; OPEN-circuit voltage; NITRIC acid; CURRENT density (Electromagnetism); ION implantation
- Publication
Progress in Photovoltaics, 2016, Vol 24, Issue 6, p830
- ISSN
1062-7995
- Publication type
Article
- DOI
10.1002/pip.2739