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- Title
Reentrance of interface superconductivity in a high-T<sub>c</sub> cuprate heterostructure.
- Authors
Shen, J. Y.; Shi, C. Y.; Pan, Z. M.; Ju, L. L.; Dong, M. D.; Chen, G. F.; Zhang, Y. C.; Yuan, J. K.; Wu, C. J.; Xie, Y. W.; Wu, J.
- Abstract
Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La2-xSrxCuO4 (0.45 ≤ x ≤ 1.0) and discover an unprecedented reentrance of interface superconductivity in La2-xSrxCuO4 /La2CuO4 heterostructures. As x increases, the superconductivity is weakened and completely fades away at x = 0.8; but it revives at higher doping and fully recovers at x = 1.0. This is shown to be correlated with the suppression of the interfacial charge transfer around x = 0.8 and the weak-to-strong localization crossover in the La2-xSrxCuO4 layer. We further construct a theoretical model to account for the sophisticated relation between charge localization and interfacial charge transfer. Our work advances both the search for and control of new superconducting heterostructures. The authors study interface superconductivity in over-doped La2-xSrxCuO4/La2CuO4 heterostructures. As x increases, the superconductivity is killed at x = 0.8 but fully recovers at x = 1.0, a "re-entrant" superconductivity.
- Subjects
CUPRATES; SUPERCONDUCTIVITY; CARRIER density; HIGH temperature superconductors; CHARGE transfer
- Publication
Nature Communications, 2023, Vol 14, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-023-42903-1