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- Title
Mechanism of preferential nucleation of [ ]-oriented GaN twins on an SiO<sub>2</sub>-patterned m-plane sapphire substrate.
- Authors
Yoon, Hansub; Jue, Miyeon; Lee, Hyemi; Lee, Sanghwa; Kim, Chinkyo
- Abstract
The mechanism of preferential nucleation of []-oriented GaN faceted twins on an SiO2-patterned m-plane sapphire substrate was investigated. Each variant of twins, which were enclosed by c- and m-facets, was observed to be preferentially nucleated over the opposite sides of an SiO2 pattern. It was hypothesized, from the fact that the same method of Legendre transformation is applied to a Wulff plot and a kinetic Wulff plot to determine the growth morphology of a crystalline domain, that the effective surface energy of c- and m-facets would be proportional to the growth rate of the respective facet. On the basis of this hypothesis, minimization of the effective surface energy of a nucleated domain was proposed as a mechanism of preferential nucleation. This proposed mechanism successfully explained the preferential nucleation behaviour.
- Subjects
CRYSTALS; MORPHOLOGY; NUCLEATION; SAPPHIRES; LEGENDRE'S functions
- Publication
Journal of Applied Crystallography, 2015, Vol 48, Issue 1, p195
- ISSN
0021-8898
- Publication type
Article
- DOI
10.1107/S1600576714027873