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InGaAs Nanodomains Formed insitu on the Surface of (Al,Ga)As.
Published in:
Technical Physics Letters, 2001, v. 27, n. 3, p. 233, doi. 10.1134/1.1359837
By:
- Krestnikov, I. L.;
- Cherkashin, N. A.;
- Sizov, D. S.;
- Bedarev, D. A.;
- Kochnev, I. V.;
- Lantratov, V. M.;
- Ledentsov, N. N.
Publication type:
Article
Photoinduced self-organization of gallium nanowires on a GaN surface.
Published in:
Technical Physics Letters, 1999, v. 25, n. 5, p. 385, doi. 10.1134/1.1262491
By:
- Bedarev, D. A.;
- Kognovitskiı, S. O.;
- Lundin, V. V.
Publication type:
Article
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.
Published in:
Technical Physics Letters, 1998, v. 24, n. 12, p. 942, doi. 10.1134/1.1262326
By:
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Mamutin, V. V.;
- Ivanov, S. V.;
- Zhmerik, V. N.;
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Kop’ev, P. S.
Publication type:
Article
Study of postgrowth processing in the fabrication of quantum-cascade lasers.
Published in:
Semiconductors, 2014, v. 48, n. 8, p. 1103, doi. 10.1134/S1063782614080181
By:
- Mamutin, V.;
- Ilyinskaya, N.;
- Bedarev, D.;
- Levin, R.;
- Pushnyi, B.
Publication type:
Article
Stresses in Selectively Oxidized GaAs/(AlGa)<sub>x</sub>O<sub>y</sub> Structures.
Published in:
Semiconductors, 2005, v. 39, n. 7, p. 748, doi. 10.1134/1.1992627
By:
- Blokhin, S. A.;
- Smirnov, A. N.;
- Sakharov, A. V.;
- Gladyshev, A. G.;
- Kryzhanovskaya, N. V.;
- Maleev, N. A.;
- Zhukov, A. E.;
- Semenova, E. S.;
- Bedarev, D. A.;
- Nikitina, E. V.;
- Kulagina, M. M.;
- Maksimov, M. V.;
- Ledentsov, N. N.;
- Ustinov, V. M.
Publication type:
Article
Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3μm Wavelength Range.
Published in:
Semiconductors, 2000, v. 34, n. 5, p. 594, doi. 10.1134/1.1188034
By:
- Maleev, N. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Krestnikov, I. L.;
- Kayander, I. N.;
- Odnoblyudov, V. A.;
- Suvorova, A. A.;
- Tsatsul’nikov, A. F.;
- Shernyakov, Yu. M.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots.
Published in:
Semiconductors, 2000, v. 34, n. 3, p. 323, doi. 10.1134/1.1187980
By:
- Tsatsul’nikov, A. F.;
- Volovik, B. V.;
- Bedarev, D. A.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Maleev, N. A.;
- Musikhin, Yu. G.;
- Ustinov, V. M.;
- Bert, N. A.;
- Kop’ev, P. S.;
- Bimberg, D.;
- Alferov, Zh. I.
Publication type:
Article
Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands.
Published in:
Semiconductors, 2000, v. 34, n. 2, p. 195, doi. 10.1134/1.1187932
By:
- Sobolev, M. M.;
- Kochnev, I. V.;
- Lantratov, V. M.;
- Bert, N. A.;
- Cherkashin, N. A.;
- Ledentsov, N. N.;
- Bedarev, D. A.
Publication type:
Article
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 886, doi. 10.1134/1.1187805
By:
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Volovik, B. V.;
- Ivanov, S. V.;
- Maksimov, M. V.;
- Musikhin, Yu. G.;
- Ledentsov, N. N.;
- Mel’tser, B. Ya.;
- Solov’ev, V. A.;
- Kop’ev, P. S.;
- Chernyshov, A. Yu.;
- Belousov, M. V.
Publication type:
Article
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 901, doi. 10.1134/1.1187627
By:
- Volovik, B. V.;
- Tsatsul’nikov, A. F.;
- Bedarev, D. A.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ledentsov, N. N.;
- Maksimov, M. V.;
- Maleev, N. A.;
- Musikhin, Yu. G.;
- Suvorova, A. A.;
- Ustinov, V. M.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.;
- Werner, P.
Publication type:
Article
Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures.
Published in:
Semiconductors, 1999, v. 33, n. 8, p. 929, doi. 10.1134/1.1187631
By:
- Kovsh, A. R.;
- Zhukov, A. E.;
- Maleev, N. A.;
- Mikhrin, S. S.;
- Ustinov, V. M.;
- Tsatsul’nikov, A. F.;
- Maksimov, M. V.;
- Volovik, B. V.;
- Bedarev, D. A.;
- Shernyakov, Yu. M.;
- Kondrat’eva, E. Yu.;
- Ledentsov, N. N.;
- Kop’ev, P. S.;
- Alferov, Zh. I.;
- Bimberg, D.
Publication type:
Article
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix.
Published in:
Semiconductors, 1999, v. 33, n. 1, p. 80, doi. 10.1134/1.1187651
By:
- Zhen, Zhao;
- Bedarev, D. A.;
- Volovik, B. V.;
- Ledentsov, N. N.;
- Lunev, A. V.;
- Maksimov, M. V.;
- Tsatsul’nikov, A. F.;
- Egorov, A. Yu.;
- Zhukov, A. E.;
- Kovsh, A. R.;
- Ustinov, V. M.;
- Kop’ev, P. S.
Publication type:
Article
Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs.
Published in:
Physica Status Solidi (B), 2001, v. 224, n. 3, p. 839, doi. 10.1002/(SICI)1521-3951(200104)224:3<839::AID-PSSB839>3.0.CO;2-U
By:
- Egorov, A.Yu.;
- Bedarev, D.;
- Bernklau, D.;
- Dumitras, G.;
- Riechert, H.
Publication type:
Article
Reconstruction of the catalytic cracking installation at Ryazan Oil Refining Company.
Published in:
Chemistry & Technology of Fuels & Oils, 2009, v. 45, n. 1, p. 12, doi. 10.1007/s10553-009-0095-9
By:
- Lugovskoi, A. I.;
- Solovkin, V. G.;
- Kapustin, V. M.;
- Bedarev, D. V.;
- Ermakov, V. P.;
- Gazizova, E. I.
Publication type:
Article

Found: 14