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Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides.
Published in:
Technical Physics Letters, 2007, v. 33, n. 4, p. 333, doi. 10.1134/S1063785007040189
By:
- Jmerik, V. N.;
- Mizerov, A. M.;
- Shubina, T. V.;
- Listoshin, S. B.;
- Ivanov, S. V.
Publication type:
Article
Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs.
Published in:
Semiconductors, 2023, v. 57, n. 12, p. 550, doi. 10.1134/S1063782623090105
By:
- Lazarenko, A. A.;
- Shubina, K. Yu.;
- Nikitina, E. V.;
- Pirogov, E. V.;
- Mizerov, A. M.;
- Sobolev, M. S.
Publication type:
Article
Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 508, doi. 10.1134/S106378262308016X
By:
- Timoshnev, S. N.;
- Benemanskaya, G. V.;
- Mizerov, A. M.;
- Sobolev, M. S.;
- Enns, Ya. B.
Publication type:
Article
On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.
Published in:
Semiconductors, 2022, v. 56, n. 4, p. 253, doi. 10.1134/S1063782622040030
By:
- Seredin, P. V.;
- Radam, Ali Obaid;
- Goloshchapov, D. L.;
- Len'shin, A. S.;
- Buylov, N. S.;
- Barkov, K. A.;
- Nesterov, D. N.;
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Nikitina, E. V.;
- Arsentyev, I. N.;
- Sharafidinov, Sh.;
- Kukushkin, S. A.;
- Kasatkin, I. A.
Publication type:
Article
Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2021, v. 55, n. 12, p. 995, doi. 10.1134/S1063782621080170
By:
- Seredin, P. V.;
- Barkov, K. A.;
- Goloshchapov, D. L.;
- Lenshin, A. S.;
- Khudyakov, Yu. Yu.;
- Arsentiev, I. N.;
- Lebedev, A. A.;
- Sharofidinov, Sh. Sh.;
- Mizerov, A. M.;
- Kasatkin, I. A.;
- Prutskij, Tatiana
Publication type:
Article
Photoluminescence Study of AlGaAs/GaAs after Focused Ion Beam Milling.
Published in:
Semiconductors, 2020, v. 54, n. 14, p. 1869, doi. 10.1134/S1063782620140316
By:
- Voznyuk, G. V.;
- Grigorenko, I. N.;
- Mitrofanov, M. I.;
- Nikolaev, D. N.;
- Mizerov, M. N.;
- Evtikhiev, V. P.
Publication type:
Article
Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation.
Published in:
Semiconductors, 2020, v. 54, n. 14, p. 1847, doi. 10.1134/S1063782620140183
By:
- Lubyankina, E. A.;
- Toporov, V. V.;
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Shubina, K. Yu.;
- Bairamov, B. H.;
- Bouravleuv, A. D.
Publication type:
Article
Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.
Published in:
Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Khudyakov, Yu. Yu.;
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Arsentyev, I. N.;
- Beltyukov, A. N.;
- Leiste, Harald;
- Kukushkin, S. A.
Publication type:
Article
Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.
Published in:
Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Nikitina, E. V.;
- Arsentiev, I. N.;
- Kukushkin, S. A.
Publication type:
Article
Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239
By:
- Timoshnev, S. N.;
- Mizerov, A. M.;
- Lapushkin, M. N.;
- Kukushkin, S. A.;
- Bouravleuv, A. D.
Publication type:
Article
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1717, doi. 10.1134/S1063782619160176
By:
- Mokhov, D. V.;
- Berezovskaya, T. N.;
- Nikitina, E. V.;
- Shubina, K. Yu.;
- Mizerov, A. M.;
- Bouravleuv, A. D.
Publication type:
Article
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching.
Published in:
Semiconductors, 2019, v. 53, n. 11, p. 1545, doi. 10.1134/S1063782619110101
By:
- Levitskii, Ya. V.;
- Mitrofanov, M. I.;
- Voznyuk, G. V.;
- Nikolayev, D. N.;
- Mizerov, M. N.;
- Evtikhiev, V. P.
Publication type:
Article
On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1187, doi. 10.1134/S1063782619090112
By:
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Nikitina, E. V.;
- Sobolev, M. S.;
- Shubin, K. Yu.;
- Berezovskaia, T. N.;
- Mokhov, D. V.;
- Lundin, W. V.;
- Nikolaev, A. E.;
- Bouravleuv, A. D.
Publication type:
Article
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.
Published in:
Semiconductors, 2019, v. 53, n. 8, p. 1120, doi. 10.1134/S1063782619080165
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Mizerov, A. M.;
- Arsentyev, I. N.;
- Leiste, Harald;
- Rinke, Monika
Publication type:
Article
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2019, v. 53, n. 7, p. 993, doi. 10.1134/S1063782619070224
By:
- Seredin, P. V.;
- Lenshin, A. S.;
- Zolotukhin, D. S.;
- Goloshchapov, D. L.;
- Mizerov, A. M.;
- Arsentyev, I. N.;
- Beltyukov, A. N.
Publication type:
Article
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 260, doi. 10.1134/S1063782619020155
By:
- Levin, R. V.;
- Nevedomskyi, V. N.;
- Bazhenov, N. L.;
- Zegrya, G. G.;
- Pushnyi, B. V.;
- Mizerov, M. N.
Publication type:
Article
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 180, doi. 10.1134/S1063782619020143
By:
- Kukushkin, S. A.;
- Mizerov, A. M.;
- Grashchenko, A. S.;
- Osipov, A. V.;
- Nikitina, E. V.;
- Timoshnev, S. N.;
- Bouravlev, A. D.;
- Sobolev, M. S.
Publication type:
Article
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 65, doi. 10.1134/S1063782619010172
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Lukin, A. N.;
- Mizerov, A. M.;
- Nikitina, E. V.;
- Arsentyev, I. N.;
- Leiste, H.;
- Rinke, M.
Publication type:
Article
Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327
By:
- Sobolev, M. S.;
- Lazarenko, A. A.;
- Mizerov, A. M.;
- Nikitina, E. V.;
- Pirogov, E. V.;
- Timoshnev, S. N.;
- Bouravleuv, A. D.
Publication type:
Article
Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications.
Published in:
Semiconductors, 2018, v. 52, n. 16, p. 2117, doi. 10.1134/S1063782618160297
By:
- Shubina, K. Yu.;
- Berezovskaya, T. N.;
- Mokhov, D. V.;
- Morozov, I. A.;
- Kotlyar, K. P.;
- Mizerov, A. M.;
- Nikitina, E. V.;
- Bouravleuv, A. D.
Publication type:
Article
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure.
Published in:
Semiconductors, 2018, v. 52, n. 14, p. 1898, doi. 10.1134/S1063782618140178
By:
- Levitskii, I. V.;
- Mitrofanov, M. I.;
- Voznyuk, G. V.;
- Nikolaev, D. N.;
- Mizerov, M. N.;
- Evtikhiev, V. P.
Publication type:
Article
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 - xN/Si(111) Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 13, p. 1653, doi. 10.1134/S106378261813016X
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Kondrashin, M. A.;
- Lenshin, A. S.;
- Khudyakov, Yu. Yu.;
- Mizerov, A. M.;
- Arsentyev, I. N.;
- Beltiukov, A. N.;
- Leiste, Harald;
- Rinke, Monika
Publication type:
Article
Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175
By:
- Mizerov, A. M.;
- Timoshnev, S. N.;
- Sobolev, M. S.;
- Nikitina, E. V.;
- Shubina, K. Yu.;
- Berezovskaia, T. N.;
- Shtrom, I. V.;
- Bouravleuv, A. D.
Publication type:
Article
Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.
Published in:
Semiconductors, 2018, v. 52, n. 5, p. 660, doi. 10.1134/S1063782618050342
By:
- Timoshnev, S. N.;
- Mizerov, A. M.;
- Sobolev, M. S.;
- Nikitina, E. V.
Publication type:
Article
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 244, doi. 10.1134/S1063782616020263
By:
- Tikhomirov, V.;
- Zemlyakov, V.;
- Volkov, V.;
- Parnes, Ya.;
- Vyuginov, V.;
- Lundin, W.;
- Sakharov, A.;
- Zavarin, E.;
- Tsatsulnikov, A.;
- Cherkashin, N.;
- Mizerov, M.;
- Ustinov, V.
Publication type:
Article
Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures.
Published in:
Semiconductors, 2015, v. 49, n. 5, p. 700, doi. 10.1134/S1063782615050139
By:
- Levin, R.;
- Marichev, A.;
- Shvarts, M.;
- Marukhina, E.;
- Khvostikov, V.;
- Pushnyi, B.;
- Mizerov, M.;
- Andreev, V.
Publication type:
Article
Fabrication and study of p-n structures with crystalline inclusions in the space-charge region.
Published in:
Semiconductors, 2013, v. 47, n. 12, p. 1652, doi. 10.1134/S1063782613120105
By:
- Kalinovsky, V. S.;
- Levin, R. V.;
- Pushniy, B. V.;
- Mizerov, M. N.;
- Rumyantsev, V. D.;
- Andreev, V. M.
Publication type:
Article
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1281, doi. 10.1134/S1063782612100168
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Zavarin, E.;
- Nikolaev, A.;
- Sakharov, A.;
- Rozhavskaya, M.;
- Usov, S.;
- Brunkov, P.;
- Synitsin, M.;
- Davydov, D.;
- Mizerov, M.;
- Cherkashin, N.
Publication type:
Article
InGaN/GaN heterostructures grown by submonolayer deposition.
Published in:
Semiconductors, 2012, v. 46, n. 10, p. 1335, doi. 10.1134/S106378261210017X
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Zavarin, E.;
- Sakharov, A.;
- Musikhin, Yu.;
- Usov, S.;
- Mizerov, M.;
- Cherkashin, N.
Publication type:
Article
A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.
Published in:
Semiconductors, 2010, v. 44, n. 6, p. 808, doi. 10.1134/S1063782610060205
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Kryzhanovskaya, N. V.;
- Synitsin, M. A.;
- Sizov, V. S.;
- Zakgeim, A. L.;
- Mizerov, M. N.
Publication type:
Article
A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.
Published in:
Semiconductors, 2010, v. 44, n. 3, p. 373, doi. 10.1134/S1063782610030176
By:
- Zakgeim, A. L.;
- Kuryshev, G. L.;
- Mizerov, M. N.;
- Polovinkin, V. G.;
- Rozhansky, I. V.;
- Chernyakov, A. E.
Publication type:
Article
Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 93, doi. 10.1134/S1063782610010161
By:
- Tsatsulnikov, A. F.;
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Cherkashin, N. A.;
- Ber, B. Ya.;
- Kazantsev, D. Yu.;
- Mizerov, M. N.;
- Park, Hee Seok;
- Hytch, M.;
- Hue, F.
Publication type:
Article
Features of molecular beam epitaxy of the GaN (0001) and GaN (000 $$ \bar 1 $$ ) layers with the use of different methods of activation of nitrogen.
Published in:
Semiconductors, 2009, v. 43, n. 8, p. 1058, doi. 10.1134/S1063782609080181
By:
- Mizerov, A. M.;
- Jmerik, V. N.;
- Kaibyshev, V. K.;
- Komissarova, T. A.;
- Masalov, S. A.;
- Ivanov, S. V.
Publication type:
Article
AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1420, doi. 10.1134/S1063782608120099
By:
- Jmerik, V. N.;
- Mizerov, A. M.;
- Shubina, T. V.;
- Sakharov, A. V.;
- Sitnikova, A. A.;
- Kop'ev, P. S.;
- Ivanov, S. V.;
- Lutsenko, E. V.;
- Danilchyk, A. V.;
- Rzheutskii, N. V.;
- Yablonskii, G. P.
Publication type:
Article
Monolithic white LEDs: Approaches, technology, design.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 3, p. 501, doi. 10.1134/S1027451012060237
By:
- Ustinov, V.;
- Tsatsulnikov, A.;
- Lundin, V.;
- Sakharov, A.;
- Nikolaev, A.;
- Zavarin, E.;
- Zakgeim, A.;
- Chernyakov, A.;
- Mizerov, M.;
- Cherkashin, N.;
- Hytch, M.
Publication type:
Article
InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition.
Published in:
Technical Physics Letters, 2016, v. 42, n. 1, p. 96, doi. 10.1134/S1063785016010284
By:
- Levin, R.;
- Nevedomskii, V.;
- Pushnyi, B.;
- Bert, N.;
- Mizerov, M.
Publication type:
Article
MOVPE of III-N LED structures with short technological process.
Published in:
Technical Physics Letters, 2015, v. 41, n. 3, p. 213, doi. 10.1134/S1063785015030116
By:
- Lundin, W.;
- Davydov, D.;
- Zavarin, E.;
- Popov, M.;
- Sakharov, A.;
- Yakovlev, E.;
- Bazarevskii, D.;
- Talalaev, R.;
- Tsatsulnikov, A.;
- Mizerov, M.;
- Ustinov, V.
Publication type:
Article
AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3-5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds.
Published in:
Technical Physics Letters, 2012, v. 38, n. 10, p. 900, doi. 10.1134/S1063785012100148
By:
- Vasil'ev, V.;
- Gagis, G.;
- Lyovin, R.;
- Pushnyi, B.;
- Deryagin, A.;
- Kuchinskii, V.;
- Mizerov, M.
Publication type:
Article

Found: 38

Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides.

Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs.

Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.

Effect of Pretreatment of the Silicon Substrate on the Properties of GaN Films Grown by Chloride–Hydride Vapor-Phase Epitaxy.

Photoluminescence Study of AlGaAs/GaAs after Focused Ion Beam Milling.

Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation.

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.

Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching.

On the Specific Features of the Plasma-Assisted MBE Synthesis of n<sup>+</sup>-GaN Layers on GaN/c-Al<sub>2</sub>O<sub>3</sub> Templates.

Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate.

Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.

On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method.

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications.

Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure.

Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial In<sub>x</sub>Ga<sub>1 - x</sub>N/Si(111) Heterostructures.

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation.

Photovoltaic converters of concentrated sunlight, based on InGaAsP(1.0 eV)/InP heterostructures.

Fabrication and study of <i>p-n</i> structures with crystalline inclusions in the space-charge region.

Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region.

InGaN/GaN heterostructures grown by submonolayer deposition.

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices.

A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy.

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes.

Features of molecular beam epitaxy of the GaN (0001) and GaN (000 $$ \bar 1 $$ ) layers with the use of different methods of activation of nitrogen.

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy.

Monolithic white LEDs: Approaches, technology, design.

InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition.

MOVPE of III-N LED structures with short technological process.

AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3-5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds.