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- Title
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
- Authors
Lundin, V. V.; Zavarin, E. E.; Besulkin, A. I.; Gladyshev, A. G.; Sakharov, A. V.; Kokorev, M. F.; Shmidt, N. M.; Tsatsul'nikov, A. F.; Ledentsov, N. N.; Alferov, Zh. I.; Kakanakov, R.
- Abstract
Specific features of MOCVD growth of AlGaN/GaN heterostructures have been studied. In the structures obtained, the 2D electron gas in the channel had a density of 1.2 × 1013cm–2 and a mobility of 1290 cm2/(V s) at room temperature. The effect of the purity of starting components on the properties of the structure is studied. © 2004 MAIK “Nauka / Interperiodica”.
- Subjects
METAL organic chemical vapor deposition; CHEMICAL vapor deposition; HETEROSTRUCTURES; SUPERLATTICES; ELECTRON mobility; ENERGY-band theory of solids; LOW-dimensional semiconductors
- Publication
Semiconductors, 2004, Vol 38, Issue 11, p1323
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1823068