Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleErratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.AuthorsStrel'chuk, A. M.; Lebedev, A. A.; Bulat, P. V.AbstractAn Erratum to this paper has been published: https://doi.org/10.1134/S1063782621030192SubjectsSCHOTTKY barrier diodes; SILICON diodes; HIGH temperatures; SILICON carbide; ELECTRIC current rectifiersPublicationSemiconductors, 2021, Vol 55, Issue 3, p394ISSN1063-7826Publication typeCorrection NoticeDOI10.1134/S1063782621030192