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- Title
Investigation of oxygen and argon plasma treatment on Mg-doped InZnO thin film transistors.
- Authors
Hu, Chun-Feng; Feng, Ji-Yu; Zhou, Jin; Qu, Xin-Ping
- Abstract
Mg-doped InZnO (MIZO) films were prepared by sol-gel method, and bottom-gate structured thin film transistors (TFTs) were prepared by using the MIZO films. Oxygen and argon (Ar) plasma treatments were carried out on the film and TFTs. The X-ray photoelectron spectroscopy (XPS) results show that both Ar and oxygen etching can increase the oxygen deficiencies, which effectively increase the content of carrier concentration in MIZO films. After both kinds of plasma treatment, the field effect mobility of the MIZO TFTs is greatly improved and the on/off current ratio increases two orders of magnitude.
- Subjects
THIN film transistors; OXYGEN plasmas; ARGON plasmas; MANGANESE; DOPED semiconductors; INDIUM compounds
- Publication
Applied Physics A: Materials Science & Processing, 2016, Vol 122, Issue 11, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-016-0475-z