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- Title
Temperature dependence of Raman scattering in Co-doped AlN whiskers.
- Authors
Jiang, L. B.; Li, H.; Zuo, S. B.; Bao, H. Q.; Wang, W. J.; Chen, X. L.
- Abstract
Raman studies are reported for the A1 (TO), E2 (high) and E1 (LO) phonons of Co-doped AlN whiskers from 78 K to 778 K. The temperature dependence of the Raman shifts and line widths of these phonons can be well described by an empirical model which takes into account the contribution of the thermal expansion of the lattice and the symmetric decay of phonons into two and three identical phonons with lower energy. Our results show that the three-phonon process is the dominant decay channel in A1 (TO), E2 (high) and E1 (LO). The symmetric decay of A1 (TO) may be attributed to the production of two LA phonons near the M symmetry point of the Brillouin zone. For E2 (high), the symmetric decay may be near the M and L symmetry points. The E1 (LO) phonon, whose decay behavior has not been identified in AlN, may decay near the H and K symmetry points of the Brillouin zone. Compared with undoped AlN, the stronger temperature dependence of the A1 (TO) and E2 (high) phonons in Co-doped AlN whiskers was observed, which is probably due to the distortion of the lattice and the much larger tensile stress after doping Co into AlN.
- Subjects
RAMAN effect; PHONONS; BRILLOUIN zones; SYMMETRY (Physics); ENERGY-band theory of solids
- Publication
Applied Physics A: Materials Science & Processing, 2010, Vol 100, Issue 2, p545
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-010-5870-2