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- Title
Light induced charge transport property analysis of nanostructured ZnS based Schottky diode.
- Authors
Dey, Arka; Middya, Somnath; Jana, Rajkumar; Das, Mrinmay; Datta, Joydeep; Layek, Animesh; Ray, Partha
- Abstract
In this report we have investigated the light sensing behavior and also discussed the induced charge transport phenomena through the junction made by aluminium and hydrothermally derived zinc-sulfide (ZnS). In this regards the structural, optical and electrical characterization of ZnS was performed well. The optical band gap energy (=3.68 eV) estimated from optical spectra and room temperature conductivity (0.49 × 10 S cm) measured from current-voltage characteristic explores the inorganic semiconductor behavior of the synthesized material. Depending upon the work function, aluminium (=4.4 eV) was preferred as metal contact to develop a potential barrier within the junction to study the underneath mechanism of charge transport through metal/inorganic-semiconductor interface. Moreover we have fabricated the sandwich structure ITO/ZnS/Al junction to study the effect of incident light on charge transport phenomena and demonstrated the potential applicability of the synthesized material to over crown the research on inorganic nano-semiconductor. The everbound charge transport phenomena within the device was analyzed by thermoionic emission theory. In searching its performance within light sensing electronic device we have deliberated the mobility-lifetime product, diffusion length and density of states (DOS) near Fermi level very aptly.
- Subjects
ALUMINUM; ZINC; SCHOTTKY barrier diodes; SEMICONDUCTORS; OPTICAL materials
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 6, p6325
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-4567-5