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- Title
Growth and characterization of III-N bulk crystals.
- Authors
Frazier, R. M.; Feigelson, B. N.; Twigg, M. E.; Murthy, M.; Freitas, J. A.
- Abstract
Hexagonal BN crystals were grown from solution by application of a thermal gradient. The solvent used to dissolve the source was optimized by changing the ratio of components to have the lowest melting point. The investigation of adding a third component demonstrated further reduction of the melting point with BN as an additive. A solution was created with enhanced properties allowing the growth of BN. BN was grown on a PBN seed at T g = 900 °C and P = 0.2 MPa for approximately 65 h. The BN crystals were found to be embedded in a solvent matrix, as determined by EDS. In addition, GaN crystals were grown in a modified solution at T g = 800 °C and P = 0.2 MPa. Raman spectroscopy verified wurtzite GaN structure with good crystallinity. The successful growth of BN and GaN from solution suggests this to be a method of choice for growth of the III-Ns, and may prove to be a viable alternative to current costly wafer production techniques.
- Subjects
CRYSTALS; SPECTRUM analysis; THERMOCHEMISTRY; SOLIDIFICATION; MELTING points; TEMPERATURE; RAMAN spectroscopy; CRYSTALLOGRAPHY; CRYSTALLINE polymers
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, Issue 8/9, p845
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9500-5