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- Title
Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong.
- Authors
An Quan Jiang; Xiang Jian Meng; Wei Zhang, David; Min Hyuk Park; Sijung Yoo; Yu Jin Kim; Scott, James F.; Cheol Seong Hwang
- Abstract
The dielectric permittivity in ferroelectric thin films is generally orders of magnitude smaller than in their bulk. Here, we discover a way of increasing dielectric constants in ferroelectric thin films by ca. 500% by synchronizing the pulsed switching fields with the intrinsic switching time (nucleation of domain plus forward growth from cathode to anode). In a 170-nm lead zirconate titanate thin film with an average grain size of 850 nm this produces a dielectric constant of 8200 with the maximum nucleus density of 3.8 μm-2, which is one to three orders of magnitude higher than in other dielectric thin films. This permits smaller capacitors in memory devices and is a step forward in making ferroelectric domain-engineered nano-electronics.
- Subjects
DIELECTRIC films; FERROELECTRIC thin films; CATHODES; ANODES; COMPOUND nucleus
- Publication
Scientific Reports, 2015, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep14618