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The Department of Materials Science and Engineering at the Friedrich‐Alexander‐University of Erlangen‐Nürnberg.
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- Advanced Engineering Materials, 2020, v. 22, n. 9, p. 1, doi. 10.1002/adem.202000921
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Optimal burn-in decision making.
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- Quality & Reliability Engineering International, 1998, v. 14, n. 6, p. 417, doi. 10.1002/(SICI)1099-1638(199811/12)14:6<417::AID-QRE220>3.0.CO;2-W
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PRAGMATIC PROCEDURE FOR THE ESTIMATION OF THIN DIELECTRIC RELIABILITY.
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- Quality & Reliability Engineering International, 1992, v. 8, n. 6, p. 557, doi. 10.1002/qre.4680080608
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BIMODAL LIFETIME DISTRIBUTIONS OF DIELECTRICS FOR INTEGRATED CIRCUITS.
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- Quality & Reliability Engineering International, 1991, v. 7, n. 4, p. 299, doi. 10.1002/qre.4680070417
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- Article
Measurement of complex permittivity of liquid dielectrics.
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- Microwave & Optical Technology Letters, 2002, v. 34, n. 4, p. 240, doi. 10.1002/mop.10427
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Numerical analysis of uniform rectangular waveguides filled by inhomogeneous dielectrics.
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- Microwave & Optical Technology Letters, 2002, v. 34, n. 4, p. 313, doi. 10.1002/mop.10446
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Permittivity profile inversion of a one-dimensional medium using the fractional linear transformation and the phase compensation constant.
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- Microwave & Optical Technology Letters, 2001, v. 31, n. 1, p. 10, doi. 10.1002/mop.1342
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THE DESIGN OF SINGLE-SECTION AND WIDEBAND SYMMETRICAL THREE-LINE MICROSTRIP COUPLERS.
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- Microwave & Optical Technology Letters, 1996, v. 13, n. 3, p. 165, doi. 10.1002/(SICI)1098-2760(19961020)13:3<165::AID-MOP14>3.0.CO;2-7
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COMPUTATION OF THE EQUIVALENT INDUCTIVE CIRCUIT FOR AN ARBITRARY NUMBER OF E-PLANE METAL INSERTS IN RECTANGULAR WAVEGUIDES.
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- Microwave & Optical Technology Letters, 1994, v. 7, n. 10, p. 470, doi. 10.1002/mop.4650071014
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QUASICOMPLEX MODES OF BOXED COPLANAR LINES ON LOSSY DIELECTRIC SUBSTRATE FOR MILLIMETER-WAVE APPLICATIONS.
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- Microwave & Optical Technology Letters, 1994, v. 7, n. 10, p. 431, doi. 10.1002/mop.4650071002
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- Article
A 2.5D SCALAR HELMHOLTZ WAVE SOLUTION EMPLOYING THE SPECTRAL LANCZOS DECOMPOSITION METHOD (SLDM).
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- Microwave & Optical Technology Letters, 1993, v. 6, n. 10, p. 587, doi. 10.1002/mop.4650061008
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REDUCTION OF THE RCS OF LEADING EDGE OF A CONDUCTING WING-SHAPED STRUCTURE BY MEANS OF LOSSLESS DIELECTRIC MATERIAL.
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- Microwave & Optical Technology Letters, 1991, v. 4, n. 7, p. 277, doi. 10.1002/mop.4650040711
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- Article
Main Trends in the Growth of Converter Steelmaking at the Company Severstal'.
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- Metallurgist, 2005, v. 49, n. 9/10, p. 380, doi. 10.1007/s11015-006-0010-0
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Dielectric properties of a water molecule pinned on the surface of a solid body.
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- Glass & Ceramics, 2007, v. 64, n. 7/8, p. 235, doi. 10.1007/s10717-007-0059-7
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Mechanism of growth of silicon nitride crystals in combustion of ferrosilicon in nitrogen.
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- Glass & Ceramics, 2007, v. 64, n. 7/8, p. 274, doi. 10.1007/s10717-007-0068-6
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Physicochemical Processes at the Dielectric/Oxide Melt Interface and Their Application in the Electrocoating of Diamond Powders.
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- Theoretical Foundations of Chemical Engineering, 2004, v. 38, n. 2, p. 205, doi. 10.1023/B:TFCE.0000022492.95859.b6
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Omnidirectional complete reflection from multilayer dielectric structures.
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- Optics & Spectroscopy, 2006, v. 101, n. 3, p. 463, doi. 10.1134/S0030400X06090219
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Possible Mechanisms of Dielectric Relaxation of Liquid Water and Calculation of the Temperature Dependence of the Complex Permittivity of Water.
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- Optics & Spectroscopy, 2005, v. 98, n. 6, p. 919, doi. 10.1134/1.1953988
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The investigation of the magnetodielectric effect in multiferroic ferroelectromagnets.
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- European Physical Journal B: Condensed Matter, 2005, v. 43, n. 3, p. 333, doi. 10.1140/epjb/e2005-00060-4
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Dielectric resonance, local field distribution, and optical response in 3D resonant composites.
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- European Physical Journal B: Condensed Matter, 2004, v. 42, n. 2, p. 165, doi. 10.1140/epjb/e2004-00368-5
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Nelder–Mead Optimization of Elastic Metamaterials via Machine-Learning-Aided Surrogate Modeling.
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- International Journal of Applied Mechanics, 2020, v. 12, n. 01, p. N.PAG, doi. 10.1142/S1758825120500118
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Facile temperature-controlled preparation of nanowire OMS-2 and its high performance in peroxymonosulfate-activated catalytic degradation of organic pollutants.
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- Functional Materials Letters, 2022, v. 15, n. 5, p. 1, doi. 10.1142/S1793604722510389
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Hard carbon anode materials for sodium-ion batteries.
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- Functional Materials Letters, 2018, v. 11, n. 6, p. N.PAG, doi. 10.1142/S1793604718300037
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Degradation of Surrounding Dielectrics of a Micro-Channel Due to Partial Discharges, Part 2: Parametric Study.
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- International Review on Modelling & Simulations, 2013, v. 6, n. 2, p. 577
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Thermal Transient Regime Analysis for Fuses and Power Semiconductors.
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- International Review on Modelling & Simulations, 2010, v. 3, n. 5, p. 1070
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Parametric Study of Mushroom-like and Planar Periodic Structures in Terms of Simultaneous AMC and EBG Properties.
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- Radioengineering, 2008, v. 17, n. 4, p. 19
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MECHANICAL AND ELEKTRICAL IDENTIFICATION OF RUBBER PARAMETERS.
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- Transport & Engineering, 2007, v. 24, n. 7, p. 159
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RESEARCHES OF DIELECTRIC PROPERTIES OF TIRES IN AGING PROCESS.
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- Transport & Engineering, 2007, v. 24, n. 7, p. 154
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Exact Solutions of a Spherically Symmetric Energy-Transport Model for Semiconductors.
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- Journal of Nonlinear Mathematical Physics, 2008, v. 15, p. 149, doi. 10.2991/jnmp.2008.15.s1.13
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Mediciones de rompimiento electrostático en separaciones micrométricas.
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- Revista de Ingeniería, 2009, n. 29, p. 7, doi. 10.16924/revinge.29.1
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Moore's Law and Technological Determinism.
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- Technology & Culture, 2005, v. 46, n. 3, p. 584, doi. 10.1353/tech.2005.0116
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Effect of Donor Molecular Structure and Gate Dielectric on Charge-Transporting Characteristics for Isoindigo-Based Donor-Acceptor Conjugated Polymers.
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- Advanced Functional Materials, 2016, v. 26, n. 26, p. 4695, doi. 10.1002/adfm.201504908
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Capacitance Characterization of Elastomeric Dielectrics for Applications in Intrinsically Stretchable Thin Film Transistors.
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- Advanced Functional Materials, 2016, v. 26, n. 26, p. 4680, doi. 10.1002/adfm.201600612
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Simple Salt-Coordinated n-Type Nanocarbon Materials Stable in Air.
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- Advanced Functional Materials, 2016, v. 26, n. 18, p. 3021, doi. 10.1002/adfm.201600179
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Mobility Enhancement in Solution-Processed Transparent Conductive Oxide TFTs due to Electron Donation from Traps in High- k Gate Dielectrics.
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- Advanced Functional Materials, 2016, v. 26, n. 6, p. 955, doi. 10.1002/adfm.201503940
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Strategies for Fast-Switching in All-Polymer Field Effect Transistors.
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- Advanced Functional Materials, 2014, v. 24, n. 22, p. 3324, doi. 10.1002/adfm.201303374
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Structure and electrical properties of Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-Y<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-BaTiO<sub>3</sub> lead-free piezoelectric ceramics.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 291, doi. 10.1007/s10854-009-9907-2
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Effects of La occupation site on the dielectric and piezoelectric properties of [Bi<sub>0.5</sub>(Na<sub>0.75</sub>K<sub>0.15</sub>Li<sub>0.10</sub>)<sub>0.5</sub>]TiO<sub>3</sub> ceramics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1090, doi. 10.1007/s10854-008-9832-9
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Dielectric property of Ba<sub>0.6</sub>Sr<sub>0.4</sub>TiO<sub>3</sub>–Mg<sub>0.9</sub>Zn<sub>0.1</sub>O ceramic with additives of Sm<sub>2</sub>O<sub>3</sub> and Ta<sub>2</sub>O<sub>5</sub>.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1106, doi. 10.1007/s10854-008-9834-7
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Low-temperature sintered (Zn<sub>0.65</sub>Mg<sub>0.35</sub>)TiO<sub>3</sub> microwave ceramics doped with CuV<sub>2</sub>O<sub>6</sub>.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1123, doi. 10.1007/s10854-008-9837-4
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Microstructure and microwave dielectric characteristics of CaO–B<sub>2</sub>O<sub>3</sub>–SiO<sub>2</sub> glass ceramics.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 11, p. 1135, doi. 10.1007/s10854-008-9839-2
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Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 23, doi. 10.1007/s10854-007-9424-0
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High performance OTFTs using surface-modified nanocomposite dielectric gate insulator.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 355, doi. 10.1007/s10854-008-9621-5
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Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 863, doi. 10.1007/s10854-007-9526-8
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High-κ dielectrics and advanced channel concepts for Si MOSFET.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 10, p. 915, doi. 10.1007/s10854-008-9713-2
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Tunneling currents through ultra thin HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> triple layer gate dielectrics for advanced MIS devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 902, doi. 10.1007/s10854-008-9679-0
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High- k gate stack Hf<sub> x </sub>Ti<sub>1− x </sub>ON/SiO<sub>2</sub> for SiC MOS devices.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 894, doi. 10.1007/s10854-008-9623-3
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Characterization of deep centers in semi-insulating SiC and HgI<sub>2</sub>: Application of discharge current transient spectroscopy.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 810, doi. 10.1007/s10854-007-9454-7
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A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond from temperature-dependent majority-carrier concentration.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 720, doi. 10.1007/s10854-007-9390-6
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Synthesis and characterization of the thiourea-capped CdS nanoparticles.
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- Journal of Materials Science Letters, 2003, v. 22, n. 21, p. 1491, doi. 10.1023/A:1026194929224
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