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- Title
Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact (Adv. Funct. Mater. 19/2023).
- Authors
Zhou, Yaoqiang; Tong, Lei; Chen, Zefeng; Tao, Li; Li, Hao; Pang, Yue; Xu, Jian‐Bin
- Abstract
Vertical Nonvolatile Schottky-Barrier-Field-Effect Transistor with Self-Gating Semimetal Contact (Adv. Funct. Photovoltaics, reconfigurability, Schottky barriers, nonvolatility Keywords: nonvolatility; photovoltaics; reconfigurability; Schottky barriers EN nonvolatility photovoltaics reconfigurability Schottky barriers 1 1 1 05/11/23 20230508 NES 230508 B Schottky Barriers b In article number 2213254, Jian-Bin Xu, and co-workers demonstrate that the vertically stacked Schottky barrier transistor with the semimetal contact enables the simultaneous integration of the electrode and the self-gating function to achieve the reversible direction of photo-generated-charge separation, which envisaged to integrate the nonvolatility and the reconfigurable photo response and build a promising photo-powered reconfigurable in-memory architecture to mimic the brain.
- Subjects
SCHOTTKY barrier; TRANSISTORS
- Publication
Advanced Functional Materials, 2023, Vol 33, Issue 19, p1
- ISSN
1616-301X
- Publication type
Article
- DOI
10.1002/adfm.202370118