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- Title
Effects of reduced graphene oxide film on bonding interfaces between Cu microcones and 25 μm Sn/Cu bumps.
- Authors
Ju, Longlong; Sun, Menglong; Ye, Lei; Zhang, Liangzhao; Hu, Anmin; Li, Ming
- Abstract
Reduced graphene oxide (RGO) thin film was used to improve the performance of a low-temperature bonding process based on Cu microcones and Sn/Cu bumps (diameter: 25 μm), which has potential applications in high-density packaging. Under bonding conditions of a weight of 1500 g applied to each wafer for 10 min at a temperature of 120 °C, and incorporating a thin RGO layer, a compact bonding structure was obtained without interface voids. The RGO interlayer served as a barrier against interatomic diffusion of metals under zero applied pressure, and the formation of intermetallic compounds at the interface was thereby effectively reduced after bonding. Probable mechanisms for this bonding process are discussed. The investigation used standard 25 μm-diameter Sn/Cu bumps to simulate realistic industrial production.
- Subjects
GRAPHENE; TRANSITION metals; CHEMICAL reactions; ATOMIC layer deposition; MICROSTRUCTURE
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 22, p17370
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-7670-3