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CH3NH3PBI3 IV Output Parameters Degradation Investigation.
Published in:
Journal of Nano- & Electronic Physics, 2016, v. 8, n. 4, p. 1, doi. 10.21272/jnep.8(4(1)).04004
By:
- Orlova, M. N.;
- Didenko, S. I.;
- Saranin, D. S.;
- Rabinovich, O. I.;
- Krukov, A. Y.;
- Kolesnikov, A. V.
Publication type:
Article
AlGaN Heterostructure Optimization for Photodetectors.
Published in:
Journal of Nano- & Electronic Physics, 2016, v. 8, n. 3, p. 1, doi. 10.21272/jnep.8(3).03036
By:
- Didenko, S. I.;
- Rabinovich, О. I.;
- Legotin, S. A.;
- Fedorchenko, I. V.;
- Krasnov, А. А.;
- Osipov, Yu. V.;
- Melnik, M. S.;
- Sergeev, K. A.
Publication type:
Article
Heterocyclic Polymers Perspectives in Nanolayers of Donor Acceptor Heterojunction for Organic Photovoltaic Application.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04085-1
By:
- Orlova, M. N.;
- Didenko, S. I.;
- Rabinovich, O. I.;
- Saranin, D. S.
Publication type:
Article
Heterostructure Active Area Optimization by Simulation.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04035-1
By:
- Rabinovich, O. I.;
- Didenko, S. I.;
- Legotin, S. A.;
- Fedorchenko, I. V.;
- Osipov, U. V.
Publication type:
Article
The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance "Wells".
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04017-1
By:
- Legotin, S. A.;
- Murashev, V. N.;
- Yurchuk, S. Yu.;
- Yaromskiy, V. P.;
- Astahov, V. P.;
- Kuz'mina, K. A.;
- Rabinovich, O. I.;
- El'nikov, D. S.;
- Osipov, U. V.;
- Krasnov, A. A.;
- Didenko, S. I.
Publication type:
Article
The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04005-1
By:
- Urchuk, S. U.;
- Krasnov, A. A.;
- Legotin, S. A.;
- Didenko, S. I.;
- Murashev, V. N.;
- Omel'chenko, U. C.;
- Osipov, U. V.;
- Rabinovich, O. I.;
- Popkova, A. V.
Publication type:
Article
Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 4, p. 04004-1
By:
- Krasnov, A. A.;
- Legotin, S. A.;
- Omel'chenko, Yu. K.;
- Didenko, S. I.;
- Murashev, V. N.;
- Rabinovich, O. I.;
- Yurchuk, S. Yu.;
- Yaromsky, V. P.;
- Popkova, A. V.
Publication type:
Article
Simulation the Beta Power Sources Characteristics.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 3, p. 03014-1
By:
- Yurchuk, S. Yu.;
- Legotin, S. A.;
- Murashev, V. N.;
- Krasnov, A. A.;
- Omel'chenko, Yu. K.;
- Osipov, Yu. V;
- Didenko, S. I.;
- Rabinovich, O. I.
Publication type:
Article
Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 2, p. 02023-1
By:
- Murashev, V. N.;
- Yurchuk, S. Yu.;
- Legotin, S. A.;
- Yaromskiy, V. P.;
- Osipov, Yu. V.;
- Astahov, V. P.;
- El'nikov, D. S.;
- Didenko, S. I.;
- Rabinovich, O. I.;
- Kuz'mina, K. A.
Publication type:
Article
Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01011-1
By:
- Murashev, V. N.;
- Konovalov, M. P.;
- Legotin, S. A.;
- Didenko, S. I.;
- Rabinovich, O. I.;
- Krasnov, A. A.;
- Kuzmina, K. A.
Publication type:
Article
Film Growth Based on an Organic Basis for Photovoltaic p-Cells.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01013-1
By:
- Orlova, M. N.;
- Didenko, S. I.;
- Rabinovich, O. I.;
- Kolesnikov, V. A.;
- Desyatov, A. V.;
- Saranin, D. S.
Publication type:
Article
Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures.
Published in:
Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01009-1
By:
- Murashev, V. N.;
- Legotin, S. A.;
- El'nikov, D. S.;
- Didenko, S. I.;
- Rabinovich, O. I.
Publication type:
Article
Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures.
Published in:
Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03020-1
By:
- Legotin, S. A.;
- Murashev, V. N.;
- Didenko, S. I.;
- Rabinovich, O. I.;
- Elnikov, D. S.;
- Krasnov, A. A.
Publication type:
Article
Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy.
Published in:
Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03019-1
By:
- Bazalevsky, M. A.;
- Koltsov, G. I.;
- Didenko, S. I.;
- Yurchuk, S. Yu.;
- Legotin, S. A.;
- Rabinovich, O. I.;
- Murashev, V. N.;
- Kazakov, I. P.
Publication type:
Article
Formation of Polymer Films in Organic Photovoltaic Systems.
Published in:
Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03009-1
By:
- Orlova, M. N.;
- Kolesnikova, L. I.;
- Schemerov, I. V.;
- Didenko, S. I.
Publication type:
Article
Impurity Influence on Nitride LEDs.
Published in:
Journal of Nano- & Electronic Physics, 2014, v. 6, n. 3, p. 03002-1
By:
- Rabinovich, O. I.;
- Legotin, S. A.;
- Didenko, S. I.
Publication type:
Article
Optical Properties and Microdefects in CaMoO4 Single Crystals.
Published in:
Crystallography Reports, 2018, v. 63, n. 2, p. 216, doi. 10.1134/S1063774518020128
By:
- Kozlova, N. S.;
- Buzanov, O. A.;
- Kozlova, A. P.;
- Zabelina, E. V.;
- Goreeva, Zh. A.;
- Didenko, I. S.;
- Kasimova, V. M.;
- Chernykh, A. G.
Publication type:
Article
Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition.
Published in:
Instruments & Experimental Techniques, 2019, v. 62, n. 4, p. 473, doi. 10.1134/S0020441219040158
By:
- Chernykh, S. V.;
- Tarelkin, S. A.;
- Chernykh, A. V.;
- Troschiev, S. Yu.;
- Luparev, N. V.;
- Kornilov, N. V.;
- Teteruk, D. V.;
- Terentiev, S. A.;
- Blank, V. D.;
- Antipov, A. V.;
- Chubenko, A. P.;
- Glybin, Yu. N.;
- Polushin, N. I.;
- Didenko, S. I.
Publication type:
Article
Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter.
Published in:
Instruments & Experimental Techniques, 2019, v. 62, n. 3, p. 312, doi. 10.1134/S0020441219030138
By:
- Chernykh, S. V.;
- Chernykh, A. V.;
- Britvich, G. I.;
- Chubenko, A. P.;
- Burtebayev, N.;
- Zazulin, D. M.;
- Mussayev, J.;
- Khodzhaev, R.;
- Tcherdyntsev, V. V.;
- Senatov, F. S.;
- Didenko, S. I.
Publication type:
Article
Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays.
Published in:
Instruments & Experimental Techniques, 2018, v. 61, n. 5, p. 665, doi. 10.1134/S0020441218040176
By:
- Chernykh, S. V.;
- Chernykh, A. V.;
- Chubenko, A. P.;
- Pavlyuchenko, L. N.;
- Sveshnikov, Yu. N.;
- Glybin, Yu. N.;
- Konovalov, M. P.;
- Panichkin, A. V.;
- Didenko, S. I.
Publication type:
Article
Electron irradiation of near-UV GaN/InGaN light emitting diodes.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700372
By:
- Lee, In‐Hwan;
- Polyakov, Alexander Y.;
- Smirnov, N. B.;
- Shchemerov, I. V.;
- Shmidt, N. M.;
- Tal'nishnih, N. A.;
- Shabunina, E. I.;
- Cho, Han‐Su;
- Hwang, Sung‐Min;
- Zinovyev, R. A.;
- Didenko, S. I.;
- Lagov, P. B.;
- Pearton, S. J.
Publication type:
Article
GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C.
Published in:
Technical Physics Letters, 2018, v. 44, n. 10, p. 942, doi. 10.1134/S106378501810019X
By:
- Chernykh, A. V.;
- Chernykh, S. V.;
- Didenko, S. I.;
- Burtebaev, N.;
- Nasurlla, Maulen;
- Nasurlla, Marzhan;
- Britvich, G. I.;
- Chubenko, A. P.;
- Baryshnikov, F. M.;
- Sleptsov, E. V.
Publication type:
Article

Found: 22

CH<sub>3</sub>NH<sub>3</sub>PBI<sub>3</sub> IV Output Parameters Degradation Investigation.

AlGaN Heterostructure Optimization for Photodetectors.

Heterocyclic Polymers Perspectives in Nanolayers of Donor Acceptor Heterojunction for Organic Photovoltaic Application.

Heterostructure Active Area Optimization by Simulation.

The Spectral Sensitivity Characteristics Simulation of the Silicon p-i-n-structure with High Resistance "Wells".

The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply.

Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon.

Simulation the Beta Power Sources Characteristics.

Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity.

Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors.

Film Growth Based on an Organic Basis for Photovoltaic p-Cells.

Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures.

Monolithic Silicon Photodetector - Detector of Ionizing Radiation Based on Functional Integrated MOS Structures.

Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy.

Formation of Polymer Films in Organic Photovoltaic Systems.

Impurity Influence on Nitride LEDs.

Optical Properties and Microdefects in CaMoO<sub>4</sub> Single Crystals.

Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition.

Fast-Neutron Detectors Based on Surface-Barrier GaAs Sensors with an Ultrahigh-Molecular-Weight Polyethylene Converter.

Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays.

Electron irradiation of near-UV GaN/InGaN light emitting diodes.

GaAs Schottky Barrier Detectors for Alpha-Particle Spectrometry at Temperatures up to 120°C.