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- Title
Relationship between quasi-threshold and thresholdless auger recombination processes in InAs/GaAs quantum dots.
- Authors
Shkolnik, A. S.; Evtikhiev, V. P.; Zegrya, G. G.
- Abstract
The principal mechanisms of the nonradiative (Auger) recombination of nonequilibrium charge carriers in semiconductor heterostructures with quantum dots (QDs) are considered. It is shown that the Auger recombination process in QDs can proceed, in addition to a threshold mechanism, by means of two other substantially different mechanisms—thresholdless and quasi-threshold—and either of these can predominate, depending on the QD size. For a QD radius of ∼30 Å, the probability of Auger recombination is comparable with that of radiative recombination.
- Subjects
RECOMBINATION in semiconductors; QUANTUM dots; QUANTUM electronics; AUGER effect; EXCITON theory
- Publication
Technical Physics Letters, 2006, Vol 32, Issue 8, p670
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785006080104