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- Title
Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum.
- Authors
Chen, Guangyuan; Xue, Ning; Qi, Zhimei; Ma, Weichao; Li, Wangzhe; Jin, Zhenhu; Chen, Jiamin
- Abstract
Electro-optic modulation devices are essential components in the field of integrated optical chips. High-speed, low-loss electro-optic modulation devices represent a key focus for future developments in integrated optical chip technology, and they have seen significant advancements in both commercial and laboratory settings in recent years. Current electro-optic modulation devices typically employ architectures based on thin-film lithium niobate (TFLN), traveling-wave electrodes, and impedance-matching layers, which still suffer from transmission losses and overall design limitations. In this paper, we demonstrate a lithium niobate electro-optic modulation device based on bound states in the continuum, featuring a non-overlay structure. This device exhibits a transmission loss of approximately 1.3 dB/cm, a modulation bandwidth of up to 9.2 GHz, and a minimum half-wave voltage of only 3.3 V.
- Subjects
BOUND states; LITHIUM niobate
- Publication
Micromachines, 2024, Vol 15, Issue 4, p516
- ISSN
2072-666X
- Publication type
Article
- DOI
10.3390/mi15040516