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- Title
Tailoring Surface and Electrical Properties of Ni/4H-nSiC Schottky Barrier Diodes via Selective Swift Heavy Ion Irradiation.
- Authors
Kumar, Vibhor; Maan, Anup S.; Akhtar, Jamil
- Abstract
In this experiment, the atomic scale surface and electrical properties of Ni/4HnSiC Schottky barrier diode (SBD) are selectively modified (using a shadow mask with openings in active area i.e., Schottky contact, of the device only and covered remaining area) and irradiated with 200MeV 107Ag14+ ions at a fluence of 1013 ionscm-2. The current-voltage (I-V) and the capacitance-voltage (C-V) characteristics are discussed in detail to rationalize the performances of pristine and irradiated SBDs. Compared to pristine and conventional way irradiated (i.e., without any mask) SBDs, the I-V characteristics of selectively irradiated SBD show significant improvement in barrier height and leakage current. Atomic force microscopic (AFM) features of selectively irradiated SiC show modified surface properties at irradiated, masked, and transition sites. The observed AFM features are due to the quodons induced transient of atomic disorders/defects in crystalline SiC and their pile-up at transition site. This controlled way localization of defects reorder the atomic structure at the edges of SBD and thus improves its electrical characteristics.
- Subjects
SCHOTTKY barrier diodes; NICKEL; ELECTRIC properties; SILICON carbide; HEAVY ions; ATOMIC force microscopes
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2018, Vol 215, Issue 5, p1
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201700555