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- Title
Electrical characterisation of epitaxial AlN/Nb<sub>2</sub>N heterostructures grown by molecular beam epitaxy.
- Authors
Downey, B. P.; Katzer, D. S.; Nepal, N.; Meyer, D. J.; Storm, D. F.; Wheeler, V. D.; Hardy, M. T.
- Abstract
Initial electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy on 6H-SiC substrates is presented. Metal--insulator--metal (MIM) devices of varying diameter were used for current--voltage and capacitance--voltage (C-V) measurements at various temperatures. From C--V measurements, a dielectric constant of 10.1 was extracted along with a linear dependence of capacitance on temperature of 0.02 nF/cm²/°C. Leakage current was determined to be consistent with a Poole--Frenkel conduction mechanism at electric fields >1.25 MV/cm with an extracted trap ionisation energy of 0.82 eV. Electric field breakdown ranged between 3.4 and 5.6 MV/cm with some dependence on the diameter of the MIM device. These initial findings demonstrate the potential for high-power devices based on AlN.
- Subjects
ALUMINUM nitride; HETEROSTRUCTURES; MOLECULAR beam epitaxy; METAL-insulator-metal devices; CURRENT-voltage characteristics; CAPACITANCE-voltage characteristics; PERMITTIVITY; POOLE-Frenkel effect
- Publication
Electronics Letters (Wiley-Blackwell), 2016, Vol 52, Issue 14, p1263
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2016.0331