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- Title
Modeling the curvature and interface shear stress of GaN-sapphire system.
- Authors
Li, Jia; Shi, Junjie; Wu, Jiejun; Liu, Huizhao
- Abstract
The curvature and interface shear stress of GaN-sapphire system are studied by establishing the mechanical equations based on two main assumptions: (a) the thickness of GaN film can be compared to the thickness of sapphire substrate, and (b) the thickness of GaN film is non-uniform. Our results show that the curvature of GaN-sapphire system is a variable within the whole circular system. The interface shear stress changes direction around at the middle of radius for the circular system, and the curvature have an important effect on the interface shear stress due to the consideration of non-uniform thickness for GaN film.
- Subjects
MATHEMATICAL models; INTERFACES (Physical sciences); SHEARING force; GALLIUM nitride; CURVATURE; THICKNESS measurement; SUBSTRATES (Materials science)
- Publication
Modern Physics Letters B, 2016, Vol 30, Issue 8, p-1
- ISSN
0217-9849
- Publication type
Article
- DOI
10.1142/S0217984916500998